Electromigration and electronic device degradation / edited by Aris Christou.

Contributor(s): Christou, APublisher: New York : Wiley, c1994Description: xiv, 343 p. : ill. ; 25 cmISBN: 0471584894 (cloth : alk. paper)Subject(s): Telecommunication EngineeringDDC classification: 621.3815,ELE Online resources: Publisher description | Table of Contents
Contents:
Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (Page-1), Simulation and Computer Models for Electromigration (Page-27), Temperature Dependencies on Electromigration (Page-79), Electromigration and Related Failure Mechanisms in VLSI Metallizations (Page-105),Metallic Electromigration Phenomena (Page-139), Theoretical and Experimental Study of Electromigration (Page-167), GaAs on Silicon Performance and Reliability (Page-235),Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (Page-263), Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (Page-291), Reliable Metallization for VLSI (Page-317).
Tags from this library: No tags from this library for this title. Log in to add tags.
Item type Current location Home library Shelving location Call number URL Status Notes Date due Barcode Item holds
Book Book Military College of Signals (MCS)
Military College of Signals (MCS)
General Stacks 621.3815,ELE (Browse shelf) Link to resource Available Almirah No.32, Shelf No.6 MCS26470
Total holds: 0

Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (Page-1), Simulation and Computer Models for Electromigration (Page-27), Temperature Dependencies on Electromigration (Page-79), Electromigration and Related Failure Mechanisms in VLSI Metallizations (Page-105),Metallic Electromigration Phenomena (Page-139), Theoretical and Experimental Study of Electromigration (Page-167), GaAs on Silicon Performance and Reliability (Page-235),Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (Page-263), Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (Page-291), Reliable Metallization for VLSI (Page-317).

There are no comments on this title.

to post a comment.

Click on an image to view it in the image viewer

© 2023 Central Library, National University of Sciences and Technology. All Rights Reserved.