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MS Thesis:Effect of Absorption Region Thickness on InP/ InGaAs PIN Photodiode Jibran Ahmed Abbasi

TextSeries: MS Thesis Computational Science and EngineeringPublisher: Islamabad, RCMS NUST c,2012Description: x,83,p: HB, 25,cmDDC classification: 004.12 JIB

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Item type	Current location	Home library	Shelving location	Call number	Status	Date due	Barcode	Item holds
Thesis	Central Library (CL)	Central Library (CL)	Thesis	005 (Browse shelf)	Available		CL-T-5404
Thesis	School of Interdisciplinary Engineering and Sciences (SINES)	School of Interdisciplinary Engineering and Sciences (SINES)	General Stacks	004.12 JIB (Browse shelf)	Available		RCMS002242

Total holds: 0

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Previous	004.6STA Data and Computer Communications	004.FOR Data communications and networking	004.12 FAH MS Thesis:Tuned Simulation of Double Heterojunction Bipolar Transistors	004.12 JIB MS Thesis:Effect of Absorption Region Thickness on InP/ InGaAs PIN Photodiode	004.12 SHA MS Thesis:Modeling Simulation and Characterization of Flow Control of Vortex Shedding Using Synthetic Jet Actuator	004.12 USM MS Thesis:Modeling & Simulations of phased Array Radar Front -End	004.24 PRINCIPLES OF MODEL CHECKING	Next

MS Thesis

Shelf No 7 Row No 1

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