Fundamentals of modern VLSI devices Yuan Taur, Tak H. Ning.
Publisher: Cambrige, UK ; New York : Cambridge University Press, 1998Description: xxii, 469 p. : ill. ; 26 cmISBN: 0521550564; 0521559596 (pbk.)Subject(s): Metal oxide semiconductors, Complementary | Bipolar transistors | Integrated circuits -- Very large scale integrationReview: "The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance."--BK JACKET. "The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry."--BK JACKET.| Item type | Current location | Home library | Collection | Shelving location | Call number | Status | Date due | Barcode | Item holds |
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Central Library (CL) | Central Library (CL) | NFIC | General Stacks | 621.395 TAU (Browse shelf) | Available | SEECS004374 |
"The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance."--BK JACKET. "The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry."--BK JACKET.
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