Gallium arsenide materials devices and circuits
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TextPublisher: CHICAGO JOHN WILEY 1985Description: 580PISBN: 0-471-90048-6Subject(s): GALLIUM ARSENIDE SEMICONDUCTORS METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORSDDC classification: 621.38152 GAL
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College of Electrical & Mechanical Engineering (CEME) | College of Electrical & Mechanical Engineering (CEME) | General Stacks | 621.38152 GAL (Browse shelf) | Available | CEME-32461 |
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| 621.38152 FRA'P THE PHSICS OF SEMICONDUCTOR DEVICES | 621.38152 FRE Thin film materials , stress, defect formation and surface evolution | 621.38152 FRE Thin film materials , stress, defect formation and surface evolution | 621.38152 GAL Gallium arsenide materials devices and circuits | 621.38152 GIB'S SEMICONDUCTOR ELECTRONICS | 621.38152 HAN Handbook of thin film process technology , vol-1 | 621.38152 HAN Handbook of thin film process technology , vol-1 |
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