Electromigration and electronic device degradation / 
edited by Aris Christou. 
 - New York :  Wiley,  c1994. 
 - xiv, 343 p. :  ill. ;  25 cm. 
<br/><br/>Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (Page-1), Simulation and Computer Models for Electromigration (Page-27), Temperature Dependencies on Electromigration (Page-79), Electromigration and Related Failure Mechanisms in VLSI Metallizations (Page-105),Metallic Electromigration Phenomena (Page-139), Theoretical and Experimental Study of Electromigration (Page-167), GaAs on Silicon Performance and Reliability (Page-235),Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (Page-263), 	Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (Page-291), 	Reliable Metallization for VLSI (Page-317).  	 
<br/><br/><label>ISBN: </label>0471584894 (cloth : alk. paper) 
<br/><br/><label>LCCN: </label>93016841 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Telecommunication Engineering.
<br/><br/><label>Dewey Class. No.: </label>621.3815,ELE