TY  - GEN
AU  - Christou,A.
TI  - Electromigration and electronic device degradation
SN  - 0471584894 (cloth : alk. paper)
U1  - 621.3815,ELE 
PY  - 1994///
CY  - New York
PB  - Wiley
KW  - Telecommunication Engineering
N1  - Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (Page-1), Simulation and Computer Models for Electromigration (Page-27), Temperature Dependencies on Electromigration (Page-79), Electromigration and Related Failure Mechanisms in VLSI Metallizations (Page-105),Metallic Electromigration Phenomena (Page-139), Theoretical and Experimental Study of Electromigration (Page-167), GaAs on Silicon Performance and Reliability (Page-235),Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (Page-263), 	Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (Page-291), 	Reliable Metallization for VLSI (Page-317); 	
UR  - http://www.loc.gov/catdir/description/wiley032/93016841.html
UR  - http://www.loc.gov/catdir/toc/onix03/93016841.html
ER  -