Ghandhi, Sorab Khushro, <br/><br/>
VLSI fabrication principles :  silicon and gallium arsenide / 
Sorab K. Ghandhi. 
 - New York :  Wiley,  c1983. 
 - xi, 665 p. :  ill. ;  24 cm. 
<br/><br/>Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639).  
<br/><br/><label>ISBN: </label>0471868337 : 
<br/><br/><label>LCCN: </label>82010842 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Gallium arsenide.<br/>Silicon.<br/>Telecommunication Engineering
<br/><br/><label>Dewey Class. No.: </label>621.38171,GHA