000			00309nam a2200109Ia 4500
008			230907s9999||||xx |||||||||||||| ||und||
082			_a620.193 _bSTR
245		0	_aStrained silicon heterostructures :
260			_aInstitution of Electrical Engineers, _bLondon : _c2001
300			_axii, 496 p. :
942			_cBK
999			_c600079 _d600079